Fig. 7From: High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientationa IDS-VGS and IG-VGS and b IDS-VDS curves of Ge(111) pMOSFETs with various tSi. Transistor with 0.5 nm tSi exhibits a 32% improvement in ION compared to the device with 0.9 nm tSi at VDS of − 1.5 V and VGS-VTH of − 0.8 VBack to article page