Fig. 8From: High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientationComparison of a ION, b Ileak, c SS, and d VTH for (111)-oriented Ge pMOSFETs with 0.5, 0.7, and 0.9 nm tSi showing that transistors with 0.5 nm tSi have the better ION, but worse SS and Ileak characteristics in comparison with devices with thicker tSiBack to article page