Fig. 9From: High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientationa Cinv-VG characteristics measured at 300 kHz for (111)-oriented devices with 0.5, 0.7, and 0.9 nm tSi. b μeff as a function of Qinv for Ge pMOSFETs [17]Back to article page