Table 1 Key electrical performance of Ge pMOSFETs on the different orientations
From: High mobility Ge pMOSFETs with amorphous Si passivation: impact of surface orientation
Substrate orientation | tSi (nm) | CET (nm) | Midgap Dit (cm− 2 eV − 1) | SS (mV/decade) | ION@VDS = − 0.5 V, VGS-VTH = − 0.8 V (LG = 3 μm) (μA/μm) | Ileak (nA/μm) | μeff@ Qinv = 5 × 1012 cm− 2 (cm2/V × s) |
|---|---|---|---|---|---|---|---|
(001) | 0.9 | 2.2 | 9.3 × 1012 | 115 | 17.2 | 1.6 | 273 |
(011) | 0.9 | 2.2 | 1.4 × 1013 | 159 | 15.1 | 5.5 | 240 |
(111) | 0.9 | 2.2 | 2.1 × 1013 | 187 | 13.2 | 10.7 | 203 |
(111) | 0.7 | 1.9 | 1.8 × 1013 | 166 | 17.3 | 12.3 | 218 |
(111) | 0.5 | 1.8 | 2.7 × 1013 | 209 | 20.3 | 19.8 | 212 |