Fig. 2From: High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Terminationa TEM image of sample C and b photograph of the terminated β-Ga2O3 Schottky diode c the measurement setup of forward current and d reverse current-voltage (I-V) characteristics of the β-Ga2O3 SBD to obtain the breakdown voltageBack to article page