Fig. 4From: High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Terminationa The forward J-V characteristics of the terminated and unterminated β-Ga2O3 at room temperature and b the temperature-dependent forward J-V characteristics of sample C from 300 to 423 K. c Richardson’s plot of ln(Js/T2) vs 1000/T of sample CBack to article page