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Fig. 6 | Nanoscale Research Letters

Fig. 6

From: High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination

Fig. 6

Simulation of the electric field distribution at breakdown voltage of samples A–C (a, c, e), the magnified image of selected regions in dashed box (b, d, f, g), the simulated electric field vs the position along the dashed line in (b, d, f) for three samples, Au/Ni/β-Ga2O3 interface for sample A, 50 nm below the interface for samples B and C, respectively. The maximum field is 5.05 MV/cm

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