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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: SnSe2 Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity

Fig. 2

Output and transfer characteristic of SnSe2 FET measured in the dark. Id versus Vsd characteristic of SnSe2 FET gated at different back gating voltages Vbg (a), at different top gating voltages Vtg in a linear scale (b), and at different Vtg in a semi-log scale (c). Id versus Vtg characteristic of SnSe2 FET with Vsd ranging from 2 mV to 10 mV in steps of 2 mV drawn in a semi-log scale, the inset is a linearly-scaled plot of Id-Vtg characteristic (d)

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