Table 1 The mobility of SnSe2 FET with top gating measured in the dark
From: SnSe2 Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity
Vtg < 0 | ||
|---|---|---|
Vsd (V) | gm (S) | μ (cm2/Vs) |
0.005 | 2.98E−07 | 68.56 |
0.01 | 5.84E−07 | 67.08 |
0.015 | 8.81E−07 | 67.48 |
0.02 | 1.15E−06 | 65.93 |