Table 2 The mobility of SnSe2 FET with top gating measured under illumination
From: SnSe2 Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity
Vtg < 0 | Vtg > 0 | ||||
|---|---|---|---|---|---|
Vsd (V) | gm (S) | μ (cm2/Vs) | Vsd (V) | gm (S) | μ (cm2/Vs) |
0.005 | 2.26E−07 | 52.02 | 0.005 | 9.80E−09 | 2.25 |
0.01 | 4.76E−07 | 54.74 | 0.01 | 2.60E−08 | 2.99 |
0.015 | 7.32E−07 | 56.09 | 0.015 | 5.10E−08 | 3.91 |
0.02 | 9.88E−07 | 56.78 | 0.02 | 7.90E−08 | 4.54 |