Fig. 5From: Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layera Numerical (dotted line) and analytical (solid line) BV and Ron,sp as functions of Npb for different Nd. b Numerical (dotted line) and analytical (solid line) BV and Ron,sp as functions of TstiBack to article page