TY - JOUR AU - Bruni, F. J. PY - 2015 DA - 2015// TI - Crystal growth of sapphire for substrates for high-brightness, light emitting diodes JO - Cryst Res Technol VL - 50 UR - https://doi.org/10.1002/crat.201400230 DO - 10.1002/crat.201400230 ID - Bruni2015 ER - TY - STD TI - Nabulsi F (2015) Implications for LEDs of the shift to large-diameter sapphire wafers. http://www.semiconductor-today.com/features/PDF/semiconductor-today-apr-may-2015-Implications-for.pdf. Accessed 10 Dec 2017. UR - http://www.semiconductor-today.com/features/PDF/semiconductor-today-apr-may-2015-Implications-for.pdf ID - ref2 ER - TY - JOUR AU - Choi, J. H. AU - Zoulkarneev, A. AU - Kim, S. I. AU - Baik, C. W. AU - Yang, M. H. AU - Park, S. S. AU - Suh, H. AU - Kim, U. J. AU - Bin Son, H. AU - Lee, J. S. AU - Kim, M. AU - Kim, J. M. AU - Kim, K. PY - 2011 DA - 2011// TI - Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates JO - Nat Photonics VL - 5 UR - https://doi.org/10.1038/nphoton.2011.253 DO - 10.1038/nphoton.2011.253 ID - Choi2011 ER - TY - JOUR AU - Choi, J. H. AU - Cho, E. H. AU - Lee, Y. S. AU - Shim, M. B. AU - Ahn, H. Y. AU - Baik, C. W. AU - Lee, E. H. AU - Kim, K. AU - Kim, T. H. AU - Kim, S. AU - Cho, K. S. AU - Yoon, J. AU - Kim, M. AU - Hwang, S. PY - 2014 DA - 2014// TI - Fully flexible GaN light-emitting diodes through nanovoid-mediated transfer JO - Adv Opt Mater VL - 2 UR - https://doi.org/10.1002/adom.201300435 DO - 10.1002/adom.201300435 ID - Choi2014 ER - TY - STD TI - Prabaswara A, Min JW, Zhao C, Janjua B, Zhang D, Albadri AM, Alyamani AY, Ng TK, Ooi BS (2018) Direct growth of III-nitride nanowire-based yellow light-emitting diode on amorphous quartz using thin Ti interlayer. Nanoscale Res Lett 13:41. ID - ref5 ER - TY - JOUR AU - Tuna, O. AU - Selamet, Y. AU - Aygun, G. AU - Ozyuzer, L. PY - 2010 DA - 2010// TI - High quality ITO thin films grown by dc and RF sputtering without oxygen JO - J Phys D Appl Phys VL - 43 UR - https://doi.org/10.1088/0022-3727/43/5/055402 DO - 10.1088/0022-3727/43/5/055402 ID - Tuna2010 ER - TY - JOUR AU - Jinshe, Y. AU - Guohao, Y. AU - Changmin, Y. AU - Mingyue, W. PY - 2009 DA - 2009// TI - Deposition and characterization of GaN films on ITO glass substrates by PECVD JO - Mater Res Pts 1 2 VL - 610-613 ID - Jinshe2009 ER - TY - JOUR AU - Kim, J. H. AU - Shepherd, N. AU - Davidson, M. R. AU - Holloway, P. H. PY - 2003 DA - 2003// TI - Visible and near-infrared alternating-current electroluminescence from sputter-grown GaN thin films doped with Er JO - Appl Phys Lett VL - 83 UR - https://doi.org/10.1063/1.1622106 DO - 10.1063/1.1622106 ID - Kim2003 ER - TY - JOUR AU - Kim, J. H. AU - Holloway, P. H. PY - 2004 DA - 2004// TI - Near-infrared electroluminescence at room temperature from neodymium-doped gallium nitride thin films JO - Appl Phys Lett VL - 85 UR - https://doi.org/10.1063/1.1781745 DO - 10.1063/1.1781745 ID - Kim2004 ER - TY - JOUR AU - Zhao, Y. AU - Qin, F. AU - Bai, Y. AU - Ju, Z. AU - Zhao, Y. AU - Zhang, X. AU - Li, S. AU - Zhang, D. AU - Bian, J. AU - Li, Y. PY - 2013 DA - 2013// TI - Low temperature synthesis of GaN films on ITO substrates by ECR-PEMOCVD JO - Vacuum VL - 92 UR - https://doi.org/10.1016/j.vacuum.2012.11.003 DO - 10.1016/j.vacuum.2012.11.003 ID - Zhao2013 ER - TY - JOUR AU - Park, D. C. AU - Ko, H. C. AU - Fujita, S. PY - 1998 DA - 1998// TI - Growth of GaN on indium tin oxide glass substrates by RF plasma-enhanced chemical vapor deposition method JO - Jpn J Appl Phys Part 2-Lett VL - 37 UR - https://doi.org/10.1143/JJAP.37.L294 DO - 10.1143/JJAP.37.L294 ID - Park1998 ER - TY - JOUR AU - Park, D. C. AU - Ko, H. C. AU - Fujita, S. PY - 1999 DA - 1999// TI - Growth of InxGa1-xN thin films on indium tin oxide/glass substrates by RF plasma enhanced chemical vapor deposition JO - Thin Solid Films VL - 338 UR - https://doi.org/10.1016/S0040-6090(98)01231-0 DO - 10.1016/S0040-6090(98)01231-0 ID - Park1999 ER - TY - STD TI - Bartolomé J, Hanke M, van Treeck D, Trampert A (2017) Strain driven shape evolution of stacked (In,Ga)N quantum disks embedded in GaN nanowires. Nano Lett 7–01136. ID - ref13 ER - TY - JOUR AU - Colby, R. AU - Liang, Z. AU - Wildeson, I. H. AU - Ewoldt, D. A. AU - Sands, T. D. AU - Garcia, R. E. AU - Stach, E. A. PY - 2010 DA - 2010// TI - Dislocation filtering in GaN nanostructures JO - Nano Lett VL - 10 UR - https://doi.org/10.1021/nl9037455 DO - 10.1021/nl9037455 ID - Colby2010 ER - TY - JOUR AU - Kumaresan, V. AU - Largeau, L. AU - Oehler, F. AU - Zhang, H. AU - Mauguin, O. AU - Glas, F. AU - Gogneau, N. AU - Tchernycheva, M. AU - Harmand, J. C. PY - 2016 DA - 2016// TI - Self-induced growth of vertical GaN nanowires on silica JO - Nanotechnology VL - 27 UR - https://doi.org/10.1088/0957-4484/27/13/135602 DO - 10.1088/0957-4484/27/13/135602 ID - Kumaresan2016 ER - TY - JOUR AU - Zhao, C. AU - Ng, T. K. AU - Wei, N. AU - Prabaswara, A. AU - Alias, M. S. AU - Janjua, B. AU - Shen, C. AU - Ooi, B. S. PY - 2016 DA - 2016// TI - Facile formation of high-quality InGaN/GaN quantum-disks-in-nanowires on bulk-metal substrates for high-power light-emitters JO - Nano Lett VL - 16 UR - https://doi.org/10.1021/acs.nanolett.5b04190 DO - 10.1021/acs.nanolett.5b04190 ID - Zhao2016 ER - TY - JOUR AU - Gogneau, N. AU - Jamond, N. AU - Chrétien, P. AU - Houzé, F. AU - Lefeuvre, E. AU - Tchernycheva, M. PY - 2016 DA - 2016// TI - From single III-nitride nanowires to piezoelectric generators: new route for powering nomad electronics JO - Semicond Sci Technol VL - 31 UR - https://doi.org/10.1088/0268-1242/31/10/103002 DO - 10.1088/0268-1242/31/10/103002 ID - Gogneau2016 ER - TY - STD TI - Deitz JI, Sarwar ATMG, Carnevale SD, Grassman TJ, Myers RC, Mccomb DW (2018) Nano-cathodoluminescence measurement of asymmetric carrier trapping and radiative recombination in GaN and InGaN quantum disks. Microsc Microanal 24:93–98. ID - ref18 ER - TY - JOUR AU - Auzelle, T. AU - Haas, B. AU - Minj, A. AU - Bougerol, C. AU - Rouvière, J. L. AU - Cros, A. AU - Colchero, J. AU - Daudin, B. PY - 2015 DA - 2015// TI - The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires JO - J Appl Phys VL - 117 UR - https://doi.org/10.1063/1.4923024 DO - 10.1063/1.4923024 ID - Auzelle2015 ER - TY - JOUR AU - Hu, Y. AU - Diao, X. AU - Wang, C. AU - Hao, W. AU - Wang, T. PY - 2004 DA - 2004// TI - Effects of heat treatment on properties of ITO films prepared by rf magnetron sputtering JO - Vacuum VL - 75 UR - https://doi.org/10.1016/j.vacuum.2004.01.081 DO - 10.1016/j.vacuum.2004.01.081 ID - Hu2004 ER - TY - STD TI - Kim H-d, An H-m, Kim KH, Kim SJ, Kim CS, Cho J, Schubert EF, Kim TG (2013) A universal method of producing transparent electrodes using wide-bandgap materials. Adv Funct Mater. ID - ref21 ER - TY - JOUR AU - Lee, T. H. AU - Kim, K. H. AU - Lee, B. R. AU - Park, J. H. AU - Schubert, E. F. AU - Kim, T. G. PY - 2016 DA - 2016// TI - Glass-based transparent conductive electrode: its application to visible-to-ultraviolet light-emitting diodes JO - ACS Appl Mater Interfaces VL - 8 UR - https://doi.org/10.1021/acsami.6b12767 DO - 10.1021/acsami.6b12767 ID - Lee2016 ER - TY - JOUR AU - Lazarev, S. AU - Dzhigaev, D. AU - Bi, Z. AU - Nowzari, A. AU - Kim, Y. Y. AU - Rose, M. AU - Zaluzhnyy, I. A. AU - Gorobtsov, O. Y. AU - Zozulya, A. V. AU - Lenrick, F. AU - Gustafsson, A. AU - Mikkelsen, A. AU - Sprung, M. AU - Samuelson, L. AU - Vartanyants, I. A. PY - 2018 DA - 2018// TI - Structural changes in a single GaN nanowire under applied voltage bias JO - Nano Lett VL - 18 UR - https://doi.org/10.1021/acs.nanolett.8b01802 DO - 10.1021/acs.nanolett.8b01802 ID - Lazarev2018 ER -