Fig. 1From: Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated SilicaEffect of annealing temperature on the electrical and physical characteristics of deposited ITO thin film. a Sheet resistance measured with a four-point probe after annealing at different temperatures. AFM surface topography of the ITO thin film acquired after annealing the sample at b 500 °C, c 600 °C, and d 700 °CBack to article page