Fig. 4
From: Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica
a Power-dependent measurement of GaN nanowires grown on Indium Tin Oxide performed at 10 K. b Temperature-depende nt PL of GaN nanowires grown on ITO layer. c Calculated activation energy based on temperature-dependent PL measurement. d Transparency of fused silica substrate, annealed ITO layer on fused silica, and GaN nanowires grown on ITO layer; e The XRD profiles for bare fused silica, as-deposited ITO thin film, annealed ITO thin film, and GaN nanowires grown on ITO