Fig. 2
From: Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes
a Room-temperature C-V curve of vertical SBDs for each different electrode at a frequency of 1 MHz. The inset is a plot of (1/C2) versus voltage V. b G-V curve of vertical SBDs for each different electrode. The inset is a plot of phase angle θ versus voltage V for 300-μm-diameter SBDs. c J-V curve of vertical SBDs for each different electrode