Fig. 1From: Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs InterlayersSchematic of the grown structures and corresponding energy band diagram of InAs QDs capped with a composite In0.15Al0.85As /GaAs0.85Sb0.15. The In0.15Al0.85As thickness t = 0 Å, 20 Å, 40 Å, and 60 Å for samples A, B, C, and D, respectivelyBack to article page