Fig. 2From: Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayersa High-resolution ω/2θ scans for samples A, B, C, and D. b PL spectrum of sample A obtained at 77 K and 100 mW excitation. c Power-dependent PL of sample A at 77 K. d The corresponding energy peak for the first two optical transitions versus Pex1/3 at 77 KBack to article page