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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts

Fig. 2

a The comparisons of the IDS-VGS characteristics of the RGUC FET with different hins on both logarithmic and linear scales. b The comparisons of subthreshold swings (SS) and ION/IOFF ratio of the RGUC FET with different hins. c 2-D electron concentration distribution in the silicon body in off state for the device with 2-nm hin. d 2-D electron concentration distribution in the silicon body in off state for the device with 10 nm hin

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