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Table 1 Parameter selection for RGUC FET in TCAD simulation

From: A High-Performance Rectangular Gate U Channel FETs with Only 2-nm Distance between Source and Drain Contacts

Parameters

Values

Body width (W)

6 nm

Vertical body thickness (tbv)

6 nm

Horizontal body thickness (tbh)

6 nm

Spacer thickness between S/D region (tsp)

0.5 to 4 nm

Vertical length of the gate (tgate)

8 to 16 nm

Gate oxide layer thickness (tox)

1 nm

Extension height of spacer between S/D region (hex)

0 to 10 nm

Inner height of spacer in the recessed region (hin)

3 to 10 nm

Doping concentration (ND)

1 × 1017 cm−3 to 2 × 1018 cm−3

Drain-source voltage (VDS)

0 to 1.0 V

Gate-source voltage (VGS)

0.4 to 1.0 V

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