Fig. 4From: Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon DioxideQualitative chemical composition of SiO2 films grown with the plasma exposure time of 1, 3, and 6 s measured by GDOES. The measurement has an accuracy of ± 15% and the cross-elemental comparison of the intensities is not possible in this work (no calibration factor is available)Back to article page