Fig. 6From: Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxidea Transmittance spectrum and Cauchy fitting and b refractive index dispersions of the SiO2 film grown on a sapphire substrate with a plasma power of 180 W, a BTBAS pulse time of 0.3 s, a BTBAS purge time of 3 s, a CO2 plasma exposure time of 3 s, and a CO2 plasma purge time of 2 s. Targeted film thickness was 150 nmBack to article page