Fig. 7From: Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon DioxideResidual stress of SiO2 films as a function of growth temperature. Our sample was grown with a plasma power of 180 W, a BTBAS pulse time of 0.3 s, a BTBAS purge time of 3 s, a CO2 plasma exposure time of 3 s, and a CO2 plasma purge time of 2 s. References include Putkonen et al. [21], Shestaeva et al. [30], and King [23]. Targeted film thickness of our sample was 50 nmBack to article page