Fig. 1From: Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta2O5-Al2O3 Films Grown on Silicon by Atomic Layer Depositiona The deposition rate of Ta2O5 and Al2O5 as a function of deposition temperatures. b The XRD patterns of Ta2O5, Al2O3, and Ta2O5-Al2O3 composite films annealed at 700 °CBack to article page