Fig. 3From: Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta2O5-Al2O3 Films Grown on Silicon by Atomic Layer Depositiona I-V behaviors and b the leakage current for Ta2O5-Al2O3 films with various thickness ratios. c C-V behaviors of Ta2O5-Al2O3 composite films with various ratios of Ta2O5 to Al2O3 and d dielectric constants calculated from C-V resultsBack to article page