Skip to main content
Account

Table 1 The experimental design for studying the effects of composition, interface, and deposition sequence on electrical properties

From: Effect of Composition, Interface, and Deposition Sequence on Electrical Properties of Nanolayered Ta2O5-Al2O3 Films Grown on Silicon by Atomic Layer Deposition

 

ALD cycles

Composition (Ta2O5:Al2O3)

Interfaces (in film)

Deposition sequence (first layer)

Ta2O5

Al2O3

Major cycle

I

86

0

10

1:0

0

Ta2O5

72

12

10

38:12

20

Ta2O5

55

19

10

29:19

20

Ta2O5

50

23

10

27:23

20

Ta2O5

44

26

10

23:26

20

Ta2O5

32

33

10

17:33

20

Ta2O5

0

54

10

0:1

0

Al2O3

II

11

4

50

29:19

100

Al2O3

23

8

25

29:19

50

Al2O3

43

15

13

29:19

26

Al2O3

55

19

10

29:19

20

Al2O3

63

22

9

29:19

18

Al2O3

80

28

7

29:19

14

Al2O3

III

72

12

10

38:12

20

Al2O3

72

12

10

38:12

20

Ta2O5

Navigation