Table 2 The element percentage in the Co films deposited at 100 °C and 175 °C, respectively after etching
From: Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor
After etching | Co | C | N | O |
|---|---|---|---|---|
100 °C | 39% | 40% | 14% | 7% |
175 °C | 45% | 32% | 18% | 5% |