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Table 1 RPALD HfO2 deposition parameters

From: Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism

RPALD- HfO2 thin film

Parameter

Value

Substrate temperature (°C)

250

TEMAH pulse time (s)

1.6

O2 plasma pulse time (s)

10

O2 plasma power (W)

2500

Thickness (nm)

15

RTA-post annealing process

Parameter

Value

Temperature (°C)

400–600

Time (min)

20

Ambient

N2

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