Table 1 RPALD HfO2 deposition parameters
From: Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism
RPALD- HfO2 thin film | |
Parameter | Value |
Substrate temperature (°C) | 250 |
TEMAH pulse time (s) | 1.6 |
O2 plasma pulse time (s) | 10 |
O2 plasma power (W) | 2500 |
Thickness (nm) | 15 |
RTA-post annealing process | |
Parameter | Value |
Temperature (°C) | 400–600 |
Time (min) | 20 |
Ambient | N2 |