Account

Table 2 Fitting parameter in the LSE model for two samples

From: Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence

Samples	Excited power (mW)	E₀ (eV)	E_a (eV)	E₀-E_a (meV)	\( \frac{\tau_r}{\tau_{tr}} \)	σ (meV)
Sample A	5	2.57	2.532	38	0.004	14
	10	2.579	2.538	41	0.004	14
	20	2.585	2.545	40	0.004	15
	40	2.589	2.55	39	0.003	15
Sample B	5	2.486	2.447	39	0.003	24
	10	2.516	2.461	55	0.009	30
	20	2.541	2.481	60	1.99	19
	40	2.559	2.504	55	15.01	20

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