Fig. 1From: Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−xZrxO2(a) Key process steps for the fabrication of Ge NCFETs with the different Zr compositions in Hf1−xZrxO2 ferroelectrics. (b) Schematic of the fabricated NC transistor. (c) TEM image of the gate stack of NC device illustrating the 7 nm H0.52Zr0.48O2 layer and 2 nm Al2O3 layerBack to article page