Fig. 4From: Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−xZrxO2(a) Measured IDS-VGS curves for NCFETs with Hf0.52Zr0.48O2 ferroelectric and control device. (b) Point SS vs. IDS curves showing that NCFETs have the steeper SS compared to control MOSFET. (c) IDS-VDS curves for the NCFETs demonstrating the typical NDR phenomena. (d) Comparison of the IDS for the NCFETs annealed at various temperatures at a gate overdrive of 1 VBack to article page