Fig. 5From: Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−xZrxO2(a) Measured transfer characteristics of the Hf0.33Zr0.67O2 NC Ge pFETs annealed from 450 to 550 °C. (b) Point SS as a function of IDS for the Hf0.33Zr0.67O2 devices. (c) IDS for the ferroelectric NC transistors with different annealing temperatures at a gate overdrive of 1 V Back to article page