Fig. 6From: Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticitya The retention characteristics of electrical synapse under positive programing pulse, indicating the long-term potential behaviors. b In LTD process, the post-synaptic current could be inhibited under a single negative pulse (− 0 .5V, 20 ms) and the conductance state could stay stable for over 1000 sBack to article page