Fig. 1From: Direct Growth of Graphene on Insulator Using Liquid Precursor Via an Intermediate Nanostructured State Carbon NanotubeSEM images of carbon-based nanostructures directly grown on silica at 1100 °C for growth time of a 5 min, b 10 min, c 15 min, and d 60 min. e–h Their respective Raman spectra in the frequency range 1200 to 2800 cm−1. The Raman features in the frequency range 50–300 cm−1 are illustrated as insets in e–h. G band splitting in f around 1560 cm−1 marked as asterisk and the presence of the RBM peak near 150 cm−1 indicates the formation of SWCNTBack to article page