Fig. 1From: Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer StructureThe XPS shows depth profile of Ta before (a) and after (d) annealing. b, e Depth profile of O before and after annealing, respectively. c, f Atomic concentration profile of O and Ta with depth before and after annealing, respectivelyBack to article page