Fig. 4From: Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by Ta2O5/TaOx Bi-Layer StructureThe cycling results of a the devices without annealing under 300 DC cycles and b the devices with annealing under 400 DC cycles. c, d Endurance characteristics under AC mode with the optimized operation configuration: set 3 V/100 ns; RESET − 2 V/200 ns. Up to 106 cycles were obtained for the device after annealingBack to article page