Fig. 11From: Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applicationsa Measured IDS-VGS curves for NEI (3.6 nm) FeFET, through 1000 DC sweeping cycles. b DC sweeping endurance measurements show that the NEI FeFET has a stable MW through 1000 cyclesBack to article page