Fig. 13From: Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory ApplicationsBenchmarking of NEI layers against reported doped HfO2 films, with regard to Ec and Pr. NEI achieves much lower Pr compared to doped HfO2 while maintaining similar Ec. [2, 3, 21, 25,26,27]Back to article page