Fig. 4From: Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applicationsa–c Measured P-V curves of TaN/NEI (3.6 nm)/Ge, TaN/NEI (6 nm)/Si0.7Ge0.3, and TaN/NEI (10 nm)/TaN, respectivelyBack to article page