Fig. 7
a Measured IDS-VGS and IG-VGS curves of NCFETs with 3.6-nm NEI annealed at 450 °C and 500 °C. b NEI NCFETs has the sub-60 mV/decade points for a VDS value of − 0.05 V. c IDS-VDS curves for the NEI NCFETs showing the obvious NDR phenomena. NC transistor annealed at 500 °C achieves a 29% IDS improvement compared to the device with RTA at 450 °C at a supply voltage of 1.0 V