Fig. 4From: New Insights on Factors Limiting the Carrier Transport in Very Thin Amorphous Sn-Doped In2O3 Films with High Hall Mobilitya Electrical resistivity ρ, b carrier concentration ne, and c Hall mobility μH of a-ITO films grown at an OFR of 20 sccm (triangles) or 30 sccm (circles) as functions of thickness t. All values were obtained at room temperatureBack to article page