Fig. 7From: New Insights on Factors Limiting the Carrier Transport in Very Thin Amorphous Sn-Doped In2O3 Films with High Hall Mobilitya Mean free path λ as a function of film thickness t and b relationship between Hall mobility μH and the ratio of thickness t to λ, t/λ, for a-ITO films grown at an OFR of 20 sccm (triangles) or of 30 sccm (circles). The solid line [A] and dot-dashed line [B; for each OFR] denote linear fits of the data for t = 5–10 nm and t = 10–50 nm, respectively. The correlation coefficients R are specified for all fitted linesBack to article page