Fig. 4
From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Current forming process of the Pt/HfO2/TiOx/Pt RRAM device in a S1, b S2, and c S3
Fig. 4 | Nanoscale Research Letters
From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Current forming process of the Pt/HfO2/TiOx/Pt RRAM device in a S1, b S2, and c S3