Fig. 5
From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
100 cycles stable bidirectional I-V curves in a S1, b S2, and c S3
Fig. 5 | Nanoscale Research Letters
From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
100 cycles stable bidirectional I-V curves in a S1, b S2, and c S3