Fig. 7
From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Device-to-device variation of RLRS and RHRS for 20 devices in a S1, b S2, and c S3
Fig. 7 | Nanoscale Research Letters
From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Device-to-device variation of RLRS and RHRS for 20 devices in a S1, b S2, and c S3