Table 1 The cycle-to-cycle variation characteristic of three samples
From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
Sample | Average value(μ) (ohm) | Standard deviation(σ) (ohm) | Relative standard deviation (σ/μ) | |||
|---|---|---|---|---|---|---|
LRS | HRS | LRS | HRS | LRS | HRS | |
S1 | 1.96e5 | 9.91e5 | 8.35e4 | 4.80e5 | 0.43 | 0.48 |
S2 | 134.75 | 5.35e3 | 12.13 | 663.24 | 0.09 | 0.12 |
S3 | 520.12 | 5.83e4 | 170.40 | 1.85e4 | 0.33 | 0.32 |