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Table 1 The cycle-to-cycle variation characteristic of three samples

From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

Sample Average value(μ) (ohm) Standard deviation(σ) (ohm) Relative standard deviation (σ/μ)
LRS HRS LRS HRS LRS HRS
S1 1.96e5 9.91e5 8.35e4 4.80e5 0.43 0.48
S2 134.75 5.35e3 12.13 663.24 0.09 0.12
S3 520.12 5.83e4 170.40 1.85e4 0.33 0.32