Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

Table 3 Comparison of device performance for RRAM devices

Device structure	Type	Iset@Vset	Ireset@Vreset	HRS/LRS	Pset, preset	Reference
Pt/TiO_x/HfO₂/Pt	OxRRAM	1 μA@1.52 V	1 μA@− 1.12 V	100	1.52 μW, 1.12 μW	This work
Pt/C/Ta₂O₅/TiN	OxRRAM	1 mA@− 1.5 V	0.3 mA@2.6 V	100	1.5 mW, 0.78 mW	[5]
TiN/Ti/HfO_x/TiN	VRRAM	100 μA@1.15 V	92 μA@− 0.98 V	10	115 μW, 90.2 μW	[6]
Cu/black phosphorus/Au	CBRAM	0.9 mA@0.71 V	0.9 mA@− 0.57 V	1000	0.64 mW, 0.51 mW	[7]
Sn/HfO₂/Pt	CBRAM	1 mA@3.5 V	6 mA@− 1.67 V	1e5	3.5 mW, 10.02 mW	[8]
Nb/NiO/Nb	Unipolar	15 mA@0.82 V	15 mA@0.38 V	100	12.3 mW, 5.7 mW	[9]
Ta/Ta₂O₅/Pt	Unipolar	1 mA@2.31 V	8 mA@1 V	20	2.31 mW, 8 mW	[10]