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Table 3 Comparison of device performance for RRAM devices

From: Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

Device structure Type Iset@Vset Ireset@Vreset HRS/LRS Pset, preset Reference
Pt/TiOx/HfO2/Pt OxRRAM 1 μA@1.52 V 1 μA@− 1.12 V 100 1.52 μW, 1.12 μW This work
Pt/C/Ta2O5/TiN OxRRAM 1 mA@− 1.5 V 0.3 mA@2.6 V 100 1.5 mW, 0.78 mW [5]
TiN/Ti/HfOx/TiN VRRAM 100 μA@1.15 V 92 μA@− 0.98 V 10 115 μW, 90.2 μW [6]
Cu/black phosphorus/Au CBRAM 0.9 mA@0.71 V 0.9 mA@− 0.57 V 1000 0.64 mW, 0.51 mW [7]
Sn/HfO2/Pt CBRAM 1 mA@3.5 V 6 mA@− 1.67 V 1e5 3.5 mW, 10.02 mW [8]
Nb/NiO/Nb Unipolar 15 mA@0.82 V 15 mA@0.38 V 100 12.3 mW, 5.7 mW [9]
Ta/Ta2O5/Pt Unipolar 1 mA@2.31 V 8 mA@1 V 20 2.31 mW, 8 mW [10]