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Table 1 Calculated properties of Ge pMOSFETs in three passivation conditions

From: Ge pMOSFETs with GeOx Passivation Formed by Ozone and Plasma Post Oxidation

  Dit(1012 cm–2 eV−1) EOT(nm) RSD(Ω) RCH(Ω/μm)
Wafer A 9.07 1.83 117 32.7
Wafer B 7.91 2.11 162 46.7
Wafer C 7.46 2.13 46.7 40.1