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Table 1 Comparison of the electrical parameters of our RT Al2O3 a-IGZO TFT and other a-IGZO TFTs fabricated at low temperatures (Tmax denotes the maximum process temperature)

From: High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Insulator T max
(°C)
μ EF
(cm2 V− 1 s− 1)
SS
(V/dec)
V T
(V)
Ion/off Ref.
Al2O3 RT 19.5 0.16 0.1 4.5 × 108 This work
Al2O3 RT 7.5 0.44 3.1 × 108 [31]
Al2O3 60 5.9 0.26 2.48 108 [9]
SiO2 RT 18.5 0.27 1.5 107 [4]
SiO2 RT 15.8 0.66 −0.42 4.4 × 105 [23]
SiO2 90 11 0.4 0.44 105 [32]
Ta2O5 RT 61.5 0.61 0.25 105 [10]