Fig. 10From: On the Baliga’s Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substratea The extracted on-state resistance as well as BV, and b the according BFOM of the proposed SP-VFET in different SP length and widthBack to article page