Account

Table 1 Deposition parameters of the ALD Al₂O₃ layer

From: Enhanced Si Passivation and PERC Solar Cell Efficiency by Atomic Layer Deposited Aluminum Oxide with Two-step Post Annealing

Parameter	Value
Substrate temperature (°C)	150
TMA bubbler temperature (°C)	17.5
H₂O bubbler temperature (°C)	30
Pressure (Torr)	760
TMA flow rate (sccm)	200
H₂O flow rate (sccm)	500
Thickness (nm)	15

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